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José Pedro de Abreu Coutinho

email: jose.coutinho@ua.p...
web: http://www.researc...

Orcid: 0000-0003-0280-366X

telephone: +351 234 370 823
fax: +351 234 378 197

i3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal

PEOPLE | i3N Aveiro


Electronic structure calculations of bulk solids, surfaces and nanostructures by means of first-principles atomistic modeling techniques.


1. Ciencia2007 Research Fellow, Portuguese Science and Technology Foundation (FCT, 2007).

2. Investigador FCT, Portuguese Science and Technology Foundation (FCT, 2013).


1. P. Santos, J. Coutinho, V. J. B. Torres, M. J. Rayson and P. R. Briddon, Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions, Appl. Phys. Lett. 105, 032108 (2014); doi:10.1063/1.4891575

2. R. N. Pereira, J. Coutinho, S. Niesar, T. A. Oliveira, H. Wiggers, M. J. Rayson, P. R. Briddon, M. S. Brandt, M. Stutzmann, Resonant electronic coupling enabled by small molecules in nanocrystal solids, Nano Letters 14, 3817 (2014); doi:10.1021/nl500932q

3. R. Zhachuk, S. Teys and J. Coutinho, Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined DFT and STM study, J. Chem. Phys. 138, 224702 (2013); doi:10.1063/1.4808356

4. J. Coutinho, V. P. Markevich, A. R. Peaker, B. Hamilton, S. B. Lastovskii, L. I. Murin, B. J. Svensson, M. J. Rayson, P. R. Briddon, Electronic and dynamical properties of the silicon trivacancy, Phys. Rev. B. 86, 174101 (2012).

5. R. Zhachuk and J. Coutinho, Ab initio study of height contrast in scanning tunneling microscopy of Ge/Si surface layers grown on Si(111) in presence of Bi, Phys. Rev. B 84, 193405 (2011).

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