29/7/2008
Research scientists from i3N, Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), Universidade Nova de Lisboa, developed the first Field Effect Transistor (FET) with a paper "interstrate" layer.
2/6/2008
The minister of Science, Technology and Higher Education, José Mariano Gago, chaired the ceremony of constitution of four new Associated Laboratories (LA): (...)
2/6/2008
Marco António Baptista Peres, PhD Student at I3N- Aveiro has been awarded best poster presentation prize at E-MRS (2008) Spring (...)
2/6/2008
Brígida da Costa Ferreira and Maria do Carmo Lopes researchers of I3N-Aveiro, working in a cooperation project with IPOC-FG (...)