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29/7/2008
I3N scientists develop the first Field Effect Transistor (FET) with a paper "interstrate" layer
IMRT Implemented in IPOC-FG by I3N researchers
The new device rivals in electrical performance with the actual state of the art of oxide based thin film transistors (TFTs) produced on glass or crystalline silicon substrates.
Nowadays, there is an increased interest in the use of biopolymers for low-cost electronic applications. Since cellulose is the Earth’s major biopolymer, some international teams have reported using paper
as the physical support (substrate) of electronic devices. But, until now, no one had used paper as an interstrate component of a FET.
The research team coordinated by Elvira Fortunato and Rodrigo Martins – used a common sheet of paper as the dielectric layer on oxide FETs.
The devices were fabricated on both sides of the paper sheet. This way, the paper acts simultaneously as the electric insulator and as the substrate.
The results suggest promising new disposable electronics devices, like paper displays, smart labels, smart packaging, bio-applications, RFID tags, among others.
These results will be published next September in IEEE Electron Device Letters.
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